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Microsemi Corporation JAN1N5420US
DIODE GEN PURP 600V 3A D5B
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- DIODE GEN PURP 600V 3A D5B
Product Details
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 300mA (DC)
- Series
- Military, MIL-PRF-19500/609
- Operating Temperature - Junction
- -65°C ~ 175°C
- Packaging
- Bulk
- Voltage - Forward (Vf) (Max) @ If
- 1.1V @ 300mA
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- SQ-MELF, B
- Capacitance @ Vr, F
- -
- Supplier Device Package
- D-5B
- Reverse Recovery Time (trr)
- 5ns
- Current - Reverse Leakage @ Vr
- 100µA @ 50V
- Voltage - DC Reverse (Vr) (Max)
- 50V