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Microsemi Corporation MS2506
RF POWER TRANSISTOR
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- RF POWER TRANSISTOR
Product Details
- Gain
- 6.2dB
- Current - Collector (Ic) (Max)
- 17.8A
- Series
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 15 @ 1A, 5V
- Packaging
- Bulk
- Voltage - Collector Emitter Breakdown (Max)
- 65V
- Part Status
- Obsolete
- Power - Max
- 600W
- Mounting Type
- Chassis Mount
- Package / Case
- M216
- Transistor Type
- NPN
- Operating Temperature
- 200°C
- Frequency - Transition
- 1.025GHz ~ 1.15GHz
- Supplier Device Package
- M216
- Noise Figure (dB Typ @ f)
- -