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Nexperia USA Inc. BAS316/DG/B3,115
DIODE GEN PURP 100V 250MA TO236
- Manufacturer
- Nexperia USA Inc.
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- DIODE GEN PURP 100V 250MA TO236
Product Details
- Reverse Recovery Time (trr)
- 4ns
- Current - Reverse Leakage @ Vr
- 500nA @ 80V
- Voltage - DC Reverse (Vr) (Max)
- 100V
- Current - Average Rectified (Io)
- 250mA (DC)
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- 150°C (Max)
- Series
- Automotive, AEC-Q101, BAS16
- Voltage - Forward (Vf) (Max) @ If
- 1.25V @ 150mA
- Diode Type
- Standard
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Capacitance @ Vr, F
- 1.5pF @ 0V, 1MHz
- Supplier Device Package
- TO-236AB