Nexperia USA Inc. BST82,215

Product Details

Series

-

Power Dissipation (Max)

1.25W (Ta)

FET Type

N-Channel

Supplier Device Package

SOT-23-3L

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

3.3nC @ 4.5V

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

55V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2.1A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

160mOhm @ 2.1A, 4.5V