Nexperia USA Inc. PSMN1R0-30YLC,115

Product Details

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

3.2A (Ta)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Part Status

Active

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8

Vgs(th) (Max) @ Id

3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

64mOhm @ 5A, 10V

Series

TrenchFET®

Power Dissipation (Max)

1.5W (Ta)

FET Type

P-Channel

Supplier Device Package

PowerPAK® SO-8