NXP USA Inc. PDTC143EE,115

Product Details

Resistor - Emitter Base (R2)

47 kOhms

Series

-

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Packaging

Cut Tape (CT)

Current - Collector (Ic) (Max)

100mA

Part Status

Obsolete

Current - Collector Cutoff (Max)

100nA (ICBO)

Power - Max

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce

68 @ 5mA, 5V

Mounting Type

Through Hole

Voltage - Collector Emitter Breakdown (Max)

50V

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Type

NPN - Pre-Biased

Base Part Number

FJN3314

Resistor - Base (R1)

4.7 kOhms

Frequency - Transition

250MHz

Supplier Device Package

TO-92-3