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NXP USA Inc. PMWD30UN,518
MOSFET 2N-CH 30V 5A 8TSSOP
- Manufacturer
- NXP USA Inc.
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 28mOhm @ 6.3A, 10V
- Supplier Device Package
- 8-SOIC
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 5V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 30V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 760pF @ 10V
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 6.3A, 8.6A
- Part Status
- Obsolete
- Power - Max
- 900mW
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)