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ON Semiconductor FDB52N20TM
MOSFET N-CH 200V 52A D2PAK
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 1.4
- Stock
- 4800
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.45mOhm @ 50A, 10V
- Series
- OptiMOS™
- Power Dissipation (Max)
- 2.5W (Ta), 156W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TDSON-8-17
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 89nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 6500pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 30A (Ta), 100A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 2.8V @ 120µA