Images are for reference only. See Product Specifications for product details
ON Semiconductor FDD5N60NZTM
MOSFET N-CH 600V DPAK-3
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 11713
Product Details
- Rds On (Max) @ Id, Vgs
- 10mOhm @ 14A, 20V
- Series
- -
- Power Dissipation (Max)
- 3.1W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- 8-SOIC
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 63nC @ 10V
- Vgs (Max)
- ±25V
- Drain to Source Voltage (Vdss)
- 38V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3800pF @ 20V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 14A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V, 20V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 3.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)