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ON Semiconductor FDG315N
MOSFET N-CH 30V 2A SC70-6
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 37587
Product Details
- Vgs(th) (Max) @ Id
- 3.7V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- SuperMESH™
- Rds On (Max) @ Id, Vgs
- 8.5Ohm @ 500mA, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 3W (Tc)
- Packaging
- Cut Tape (CT)
- Supplier Device Package
- TO-92-3
- Vgs (Max)
- ±30V
- Gate Charge (Qg) (Max) @ Vgs
- 10nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 600V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 156pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 400mA (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Base Part Number
- STQ1