ON Semiconductor FDN335N

Product Details

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

700mV @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

250mOhm @ 930mA, 4.5V

Series

HEXFET®

Power Dissipation (Max)

540mW (Ta)

FET Type

N-Channel

Supplier Device Package

Micro3™/SOT-23

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

3.9nC @ 4.5V

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

110pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

1.2A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

2.7V, 4.5V