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ON Semiconductor FDN338P_G
INTEGRATED CIRCUIT
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Packaging
- Bulk
- Gate Charge (Qg) (Max) @ Vgs
- 13.8nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 430pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 1.25A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 170mOhm @ 1.25A, 10V
- Series
- PowerTrench®
- Power Dissipation (Max)
- 500mW (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- SuperSOT-3