ON Semiconductor FDN359BN

Product Details

Package / Case

3-XFDFN

Vgs(th) (Max) @ Id

1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.9Ohm @ 100mA, 4.5V

Series

-

Power Dissipation (Max)

400mW (Ta)

FET Type

P-Channel

Supplier Device Package

3-DFN0806H4

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

0.4nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

28.7pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

330mA (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Mounting Type

Surface Mount