ON Semiconductor FDS8880

Product Details

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

140mOhm @ 2A, 10V

Series

HEXFET®

Power Dissipation (Max)

1W (Ta)

FET Type

N-Channel

Supplier Device Package

SOT-223

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±16V

Drain to Source Voltage (Vdss)

55V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

230pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V