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ON Semiconductor FDZ191P_P

MOSFET P-CH 20V 3A 6WLCSP

Manufacturer
ON Semiconductor
Datasheet
Price
0
Stock
100

Product Details

Base Part Number
2N7000
Vgs(th) (Max) @ Id
3V @ 1mA
Operating Temperature
-55°C ~ 150°C (TJ)
Series
-
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
FET Type
N-Channel
Power Dissipation (Max)
400mW (Ta)
Packaging
Bulk
Supplier Device Package
TO-92-3
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
60V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
200mA (Tc)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)