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ON Semiconductor FGA25N120ANTU

IGBT 1200V 40A 310W TO3P

Manufacturer
ON Semiconductor
Datasheet
Price
0.2
Stock
10000
Description
IGBT 1200V 40A 310W TO3P

Product Details

Input Type
Standard
Reverse Recovery Time (trr)
1.5µs
Gate Charge
230nC
Current - Collector (Ic) (Max)
60A
Part Status
Obsolete
Current - Collector Pulsed (Icm)
120A
Power - Max
176W
Voltage - Collector Emitter Breakdown (Max)
1000V
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Test Condition
-
Switching Energy
-
Td (on/off) @ 25°C
-
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
IGBT Type
Trench
Supplier Device Package
TO-264-3
Packaging
Tube
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 60A