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ON Semiconductor FGA6065ADF
IGBT 650V 120A 306W TO3P
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- IGBT 650V 120A 306W TO3P
Product Details
- Series
- -
- Operating Temperature
- -55°C ~ 150°C (TJ)
- IGBT Type
- Trench Field Stop
- Supplier Device Package
- TO-3PN
- Packaging
- Tube
- Vce(on) (Max) @ Vge, Ic
- 2.3V @ 15V, 40A
- Input Type
- Standard
- Reverse Recovery Time (trr)
- 60ns
- Gate Charge
- 173nC
- Current - Collector (Ic) (Max)
- 80A
- Part Status
- Active
- Current - Collector Pulsed (Icm)
- 120A
- Power - Max
- 231W
- Voltage - Collector Emitter Breakdown (Max)
- 600V
- Mounting Type
- Through Hole
- Package / Case
- TO-3
- Test Condition
- 400V, 40A, 5Ohm, 15V
- Switching Energy
- 1.46mJ (on), 540µJ (off)
- Td (on/off) @ 25°C
- 35ns/85ns