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ON Semiconductor HGTD3N60C3S9A
IGBT 600V 6A 33W TO252AA
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- IGBT 600V 6A 33W TO252AA
Product Details
- Gate Charge
- 16nC
- Current - Collector (Ic) (Max)
- 8A
- Part Status
- Obsolete
- Current - Collector Pulsed (Icm)
- 15A
- Power - Max
- 35W
- Voltage - Collector Emitter Breakdown (Max)
- 600V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Test Condition
- 300V, 5A, 40Ohm, 15V
- Switching Energy
- 88µJ (on), 107µJ (off)
- Td (on/off) @ 25°C
- 13ns/34ns
- Series
- -
- Operating Temperature
- -55°C ~ 150°C (TJ)
- IGBT Type
- -
- Supplier Device Package
- TO-220F
- Packaging
- Tube
- Vce(on) (Max) @ Vge, Ic
- 2.8V @ 15V, 5A
- Input Type
- Standard
- Reverse Recovery Time (trr)
- 55ns