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ON Semiconductor HGTG30N60B3
IGBT 600V 60A 208W TO247
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 5.83
- Stock
- 425
Product Details
- Gate Charge
- 310nC
- Current - Collector (Ic) (Max)
- 100A
- Part Status
- Active
- Current - Collector Pulsed (Icm)
- 200A
- Power - Max
- 595W
- Voltage - Collector Emitter Breakdown (Max)
- 650V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Test Condition
- 400V, 75A, 10Ohm, 15V
- Switching Energy
- 1.5mJ (on), 1mJ (off)
- Td (on/off) @ 25°C
- 110ns/270ns
- Series
- -
- Operating Temperature
- -55°C ~ 175°C (TJ)
- IGBT Type
- Trench Field Stop
- Supplier Device Package
- TO-247
- Packaging
- Tube
- Vce(on) (Max) @ Vge, Ic
- 2V @ 15V, 75A
- Input Type
- Standard
- Reverse Recovery Time (trr)
- 80ns