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ON Semiconductor HGTP5N120BND
IGBT 1200V 21A 167W TO220AB
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- IGBT 1200V 21A 167W TO220AB
Product Details
- Power - Max
- 166W
- Current - Collector Pulsed (Icm)
- 80A
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 650V
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Test Condition
- 400V, 20A, 12Ohm, 15V
- Base Part Number
- STGB20
- Switching Energy
- 140µJ (on), 560µJ (off)
- Td (on/off) @ 25°C
- 26ns/108ns
- Series
- M
- Operating Temperature
- -55°C ~ 175°C (TJ)
- IGBT Type
- Trench Field Stop
- Supplier Device Package
- D2PAK
- Input Type
- Standard
- Vce(on) (Max) @ Vge, Ic
- 2V @ 15V, 20A
- Gate Charge
- 63nC
- Reverse Recovery Time (trr)
- 166ns
- Part Status
- Active
- Current - Collector (Ic) (Max)
- 40A