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ON Semiconductor NCV5701BDR2G
HIGH CURRENT IGBT GATE DR
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- HIGH CURRENT IGBT GATE DR
Product Details
- Number of Drivers
- 2
- Driven Configuration
- Low-Side
- Series
- -
- Operating Temperature
- -40°C ~ 125°C (TJ)
- Gate Type
- N-Channel MOSFET
- Rise / Fall Time (Typ)
- 14ns, 12ns
- Packaging
- Digi-Reel®
- Supplier Device Package
- 10-WSON (4x4)
- Input Type
- Inverting
- Logic Voltage - VIL, VIH
- 0.8V, 2.2V
- Part Status
- Discontinued at Digi-Key
- Current - Peak Output (Source, Sink)
- 3A, 5A
- Channel Type
- Independent
- Mounting Type
- Surface Mount
- Package / Case
- 10-WDFN Exposed Pad
- Base Part Number
- LM5110
- Voltage - Supply
- 3.5V ~ 14V