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ON Semiconductor NDS356AP
MOSFET P-CH 30V 1.1A SSOT3
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 24697
Product Details
- FET Type
- P-Channel
- Supplier Device Package
- 6-CPH
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 14nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 600pF @ 20V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id
- 2.6V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 2A, 10V
- Series
- -
- Power Dissipation (Max)
- 1.6W (Ta)