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ON Semiconductor NGTD21T65F2WP
IGBT TRENCH FIELD STOP 650V DIE
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- IGBT TRENCH FIELD STOP 650V DIE
Product Details
- Input Type
- Standard
- Current - Collector (Ic) (Max)
- 35A
- Gate Charge
- 100nC
- Current - Collector Pulsed (Icm)
- 80A
- Part Status
- Not For New Designs
- Voltage - Collector Emitter Breakdown (Max)
- 1200V
- Power - Max
- 298W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Test Condition
- 960V, 10A, 10Ohm, 15V
- Switching Energy
- 320µJ (on), 800µJ (off)
- Td (on/off) @ 25°C
- 23ns/165ns
- Series
- -
- Operating Temperature
- -55°C ~ 150°C (TJ)
- IGBT Type
- NPT
- Supplier Device Package
- TO-220-3
- Packaging
- Tube
- Vce(on) (Max) @ Vge, Ic
- 2.7V @ 15V, 10A