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ON Semiconductor NGTD23T120F2SWK
IGBT TRENCH FIELD STOP 1200V DIE
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- IGBT TRENCH FIELD STOP 1200V DIE
Product Details
- Part Status
- Active
- Current - Collector Pulsed (Icm)
- 180A
- Power - Max
- 306W
- Voltage - Collector Emitter Breakdown (Max)
- 650V
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3, SC-65-3
- Test Condition
- 400V, 60A, 6Ohm, 15V
- Switching Energy
- 2.46mJ (on), 520µJ (off)
- Td (on/off) @ 25°C
- 25.6ns/71ns
- Series
- -
- Operating Temperature
- -55°C ~ 175°C (TJ)
- IGBT Type
- Trench Field Stop
- Supplier Device Package
- TO-3PN
- Packaging
- Tube
- Vce(on) (Max) @ Vge, Ic
- 2.3V @ 15V, 60A
- Input Type
- Standard
- Reverse Recovery Time (trr)
- 110ns
- Gate Charge
- 84nC
- Current - Collector (Ic) (Max)
- 120A