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ON Semiconductor NGTD28T65F2WP
IGBT TRENCH FIELD STOP 650V DIE
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- IGBT TRENCH FIELD STOP 650V DIE
Product Details
- Packaging
- Tube
- Vce(on) (Max) @ Vge, Ic
- 2.1V @ 15V, 10A
- Input Type
- Standard
- Reverse Recovery Time (trr)
- 350ns
- Gate Charge
- 27nC
- Current - Collector (Ic) (Max)
- 20A
- Part Status
- Active
- Voltage - Collector Emitter Breakdown (Max)
- 1200V
- Power - Max
- 85W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Test Condition
- 600V, 10A, 100Ohm, 15V
- Switching Energy
- 1.1mJ (on), 1.1mJ (off)
- Td (on/off) @ 25°C
- -
- Series
- -
- Operating Temperature
- -40°C ~ 150°C (TJ)
- IGBT Type
- PT
- Supplier Device Package
- TO-220AB