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ON Semiconductor NRVHPM120T3G
DIODE GEN PURP 200V 1A POWERMITE
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 10811
Product Details
- Supplier Device Package
- U-DFN1608-2
- Reverse Recovery Time (trr)
- 8.4ns
- Current - Reverse Leakage @ Vr
- 20µA @ 40V
- Voltage - DC Reverse (Vr) (Max)
- 40V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 1A
- Series
- -
- Operating Temperature - Junction
- -65°C ~ 150°C
- Packaging
- Digi-Reel®
- Voltage - Forward (Vf) (Max) @ If
- 660mV @ 1A
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 2-UFDFN
- Capacitance @ Vr, F
- 25pF @ 5V, 1MHz