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ON Semiconductor NTGS5120PT1G

MOSFET P-CH 60V 1.8A 6-TSOP

Manufacturer
ON Semiconductor
Datasheet
Price
0
Stock
8231

Product Details

Series
HEXFET®
Power Dissipation (Max)
1.7W (Ta)
FET Type
N-Channel
Supplier Device Package
Micro6™(TSOP-6)
Packaging
Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs
7nC @ 4.5V
Vgs (Max)
±12V
Drain to Source Voltage (Vdss)
20V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 15V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
3.2A (Ta)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Vgs(th) (Max) @ Id
700mV @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
100mOhm @ 2.2A, 4.5V