ON Semiconductor NTHD5903T1G

Product Details

Rds On (Max) @ Id, Vgs

15.5mOhm @ 8A, 10V

Series

-

Supplier Device Package

8-SO

FET Type

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs

8.6nC @ 4.5V

Packaging

Tube

Drain to Source Voltage (Vdss)

30V

FET Feature

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds

766pF @ 15V

Part Status

Obsolete

Current - Continuous Drain (Id) @ 25°C

8A, 11A

Power - Max

1.5W, 2.4W

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Base Part Number

IRF8513PBF

Vgs(th) (Max) @ Id

2.35V @ 25µA

Operating Temperature

-55°C ~ 175°C (TJ)