Renesas Electronics America 2SJ673-AZ

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

-

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

50mOhm @ 15A, 10V

Series

-

Power Dissipation (Max)

1.5W (Ta), 56W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220AB

Packaging

Bulk

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V