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Renesas Electronics America 2SK1341-E
MOSFET N-CH 900V 6A TO-3P
- Manufacturer
- Renesas Electronics America
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.6Ohm @ 4A, 10V
- Series
- -
- Power Dissipation (Max)
- 100W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-3P
- Packaging
- Tube
- Drain to Source Voltage (Vdss)
- 900V
- Vgs (Max)
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds
- 1730pF @ 10V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 8A (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3, SC-65-3