Renesas Electronics America H5N2522LSTL-E

Product Details

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

4.8nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

66pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Short Body

Vgs(th) (Max) @ Id

-

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

16.5Ohm @ 100mA, 10V

Series

-

Power Dissipation (Max)

750mW (Ta)

FET Type

N-Channel

Supplier Device Package

TO-92-3