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Renesas Electronics America H7N1002LS-E
MOSFET N-CH 100V LDPAK
- Manufacturer
- Renesas Electronics America
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- FET Type
- N-Channel
- Supplier Device Package
- 4-LDPAK
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 155nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 9700pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 75A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- SC-83
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 10mOhm @ 37.5A, 10V
- Series
- -
- Power Dissipation (Max)
- 100W (Tc)