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Renesas Electronics America H7N1002LSTL-E
MOSFET N-CH 100V LDPAK
- Manufacturer
- Renesas Electronics America
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3Ohm @ 450mA, 10V
- Series
- -
- Power Dissipation (Max)
- 2.5W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 8-SOP
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 20nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 350V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 460pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 900mA (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Mounting Type
- Surface Mount