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Renesas Electronics America HAT2116H-EL-E
MOSFET N-CH 30V 30A LFPAK
- Manufacturer
- Renesas Electronics America
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 30V 30A LFPAK
Product Details
- Vgs(th) (Max) @ Id
- 2.35V @ 250µA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.8mOhm @ 32A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 2.8W (Ta), 89W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- DIRECTFET™ MX
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 71nC @ 4.5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5970pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 32A (Ta), 180A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- DirectFET™ Isometric MX