Renesas Electronics America HAT2169H-EL-E

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1550pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

5V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

196mOhm @ 9.5A, 10V

Series

-

Power Dissipation (Max)

231W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-263

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

600V