Renesas Electronics America HAT2170H-EL-E

Product Details

Rds On (Max) @ Id, Vgs

7.5mOhm @ 15A, 10V

Series

-

Power Dissipation (Max)

20W (Tc)

FET Type

N-Channel

Supplier Device Package

LFPAK

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2420pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

30A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

Mounting Type

Surface Mount

Package / Case

SC-100, SOT-669

Vgs(th) (Max) @ Id

3V @ 1mA

Operating Temperature

150°C (TJ)