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Renesas Electronics America HAT2170HWS-E
MOSFET N-CH LFPAK-5
- Manufacturer
- Renesas Electronics America
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Rds On (Max) @ Id, Vgs
- 15mOhm @ 12.5A, 10V
- Power Dissipation (Max)
- 30W (Tc)
- Series
- -
- Supplier Device Package
- 5-LFPAK
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 61nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4350pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 25A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 8V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Vgs(th) (Max) @ Id
- 6V @ 20mA
- Operating Temperature
- 150°C