Renesas Electronics America HAT2172H-EL-E

Product Details

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4V

Part Status

Obsolete

Mounting Type

Surface Mount

Package / Case

3-SMD, Flat Leads

Vgs(th) (Max) @ Id

1V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

158mOhm @ 800mA, 4V

Series

U-MOSIII

Power Dissipation (Max)

500mW (Ta)

FET Type

P-Channel

Supplier Device Package

UFM

Packaging

Tape & Reel (TR)

Drain to Source Voltage (Vdss)

20V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 10V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

1.8A (Ta)