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Renesas Electronics America HAT2185WPWS-E
MOSFET N-PAK WPAK
- Manufacturer
- Renesas Electronics America
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Rds On (Max) @ Id, Vgs
- 30mOhm @ 4A, 10V
- Power Dissipation (Max)
- 2W (Ta)
- Series
- -
- Supplier Device Package
- 8-SOP
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 10nC @ 4.5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1210pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 8A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Operating Temperature
- 150°C