Renesas Electronics America N0439N-S19-AY

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3850pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

-

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

3.8mOhm @ 10A, 10V

Series

-

Power Dissipation (Max)

2.5W (Ta)

FET Type

N-Channel

Supplier Device Package

8-SOP

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

25nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V