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Renesas Electronics America N0602N-S19-AY
MOSFET N-CH 60V 100A TO-220
- Manufacturer
- Renesas Electronics America
- Datasheet
- Price
- 0.88
- Stock
- 100
- Description
- MOSFET N-CH 60V 100A TO-220
Product Details
- Series
- -
- Power Dissipation (Max)
- 1.5W (Ta), 156W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-262
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 133nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 7730pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 100A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 4.6mOhm @ 50A, 10V