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Renesas Electronics America NP109N04PUG-E1-AY
MOSFET N-CH 40V 110A TO-263
- Manufacturer
- Renesas Electronics America
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 10800pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 110A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.75mOhm @ 55A, 10V
- Series
- -
- Power Dissipation (Max)
- 1.8W (Ta), 250W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-263 (D²Pak)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 189nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V