Renesas Electronics America NP110N055PUG-E1-AY

Product Details

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

2.1V @ 1mA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

1.5mOhm @ 25A, 10V

Series

TrenchMOS™

Power Dissipation (Max)

324W (Tc)

FET Type

N-Channel

Supplier Device Package

D2PAK

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

105.4nC @ 5V

Vgs (Max)

±10V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

15010pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Mounting Type

Surface Mount