Renesas Electronics America NP75P03YDG-E1-AY

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4800pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead Exposed Pad

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

175°C (TJ)

Rds On (Max) @ Id, Vgs

9.7mOhm @ 37.5A, 10V

Series

-

Power Dissipation (Max)

1W (Ta), 138W (Tc)

FET Type

P-Channel

Supplier Device Package

8-HSON

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V