Renesas Electronics America NP82N055PUG-E1-AY

Product Details

Series

-

Power Dissipation (Max)

1.8W (Ta), 150W (Tc)

FET Type

P-Channel

Supplier Device Package

TO-263

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

9820pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

83A (Tc)

Part Status

Discontinued at Digi-Key

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

2.5V @ 1mA

Operating Temperature

175°C (TJ)

Rds On (Max) @ Id, Vgs

5.3mOhm @ 41.5A, 10V