Renesas Electronics America RJK1003DPN-E0#T2

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4950pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

3V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

15mOhm @ 17A, 10V

Series

TrenchFET®

Power Dissipation (Max)

3W (Ta), 136W (Tc)

FET Type

P-Channel

Supplier Device Package

TO-252, (D-Pak)

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

165nC @ 10V