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Renesas Electronics America RJK1056DPB-00#J5
MOSFET N-CH 100V 25A LFPAK
- Manufacturer
- Renesas Electronics America
- Datasheet
- Price
- 1.08
- Stock
- 100
- Description
- MOSFET N-CH 100V 25A LFPAK
Product Details
- Rds On (Max) @ Id, Vgs
- 8.5mOhm @ 45A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 3.6W (Ta), 104W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-PQFN (5x6)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 72nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 75V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3110pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 14A (Ta), 75A (Tc)
- Part Status
- Last Time Buy
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 4V @ 100µA
- Operating Temperature
- -55°C ~ 150°C (TJ)