Renesas Electronics America RJK1576DPA-00#J5A

Product Details

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Packaging

Tube

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

6450pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Part Status

Active

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

2.3mOhm @ 75A, 10V

Power Dissipation (Max)

300W (Tc)

Series

HEXFET®

Supplier Device Package

TO-262