Renesas Electronics America RJK2075DPA-00#J5A

Product Details

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

800V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1850pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6.6A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.5Ohm @ 3.3A, 10V

Series

QFET®

Power Dissipation (Max)

3.13W (Ta), 167W (Tc)

FET Type

N-Channel

Supplier Device Package

I2PAK (TO-262)

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

52nC @ 10V