Renesas Electronics America RJK5002DPD-00#J2

Product Details

FET Type

N-Channel

Supplier Device Package

TO-251

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

6.2nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

165pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id

-

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

6.8Ohm @ 1A, 10V

Series

-

Power Dissipation (Max)

30W (Tc)